Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation

Semiconductor optoelectronic devices: introduction to physics and simulation
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View all copies of this ISBN edition:. Synopsis About this title Optoelectronics has become an important part of our lives.

Provides fundamental knowledge in semiconductor physics and in electromagnetics, while helping to understand and use advanced device simulation software Demonstrates the combination of measurements and simulations in order to obtain realistic results and provides data on all required material parameters Gives deep insight into the physics of state-of-the-art devices and helps to design and analyze of modern optoelectronic devices "synopsis" may belong to another edition of this title. Book Description : This book builds a much needed bridge between theoretical and experimental research in optoelectronics by providing both fundamental knowledge in semiconductor physics and real-world simulation examples.

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What is Optoelectronic Devices & its Applications - Thyristors - Semiconductors - EDC

The following figure shows the net charge density of the pn-junction. Electric field The slope of the electric field is proportional to the net charge Poisson equation , thus the extremum of the electric field is expected to be at the pn-junction. In regions without charges, the electric field is zero. The following figure shows the electric field of the pn-junction.

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However, carrier concentrations are small and usually not exactly known in these measurements, generating some uncertainty in the extraction of broadening parameters. However, the Fermi 5. This results in a hole conductivity that hardly varies with the doping density. To directly measure the theoretically predicted strength of the superinjection effect, one should study two single color centers [ 6 , 8 , 14 , 24 , 25 , 46 , 47 ] in the i-region of the p-i-n diode under a high forward bias voltage: one near the p—i junction and one near the i—n junction. World Scientific; Singapore:

Without external bias i. To allow for a constant chemical potential i. We calculate up to eigenvalues for each band.

Thus the electron and hole densities are calculated purely quantum mechanically. The following figure shows the electron and hole concentrations for the classical and quantum mechanical calculations. For the QM calculations, different boundary conditions were used. This feature is not supported any more.